Looks better, having 678mVpp at the light blue probe and comparator output 
The gain can still be increased with different biasing. Perhaps someone else could help to calculate it ...? e.g.: R5→220Ω to 470Ω, R3→2kΩ to 5kΩ or something in-between. C2→1µF to accommodate lower cascode frequencies (kHz). When adjusting these values, have LTspice make a plot of the voltage gain vs. frequency (over the 1kHz - 10MHz span) measured at J1.drain. Additionally, I think that R4 can be increased to 100MΩ and C4 can be eliminated or substituted with a protective resistor. The C7 should be a high-ESR cap (yes - unusual) and can change R12→10MΩ. Also, it would be beneficial to swap the inputs of the comparator and apply the signal coming from R7 and the R12 hysteresis feedback to the noninverting input so C5 only stabilizes the reference voltage at the inverting input and doesn't shunt the hysteresis feedback to ground (with this change, a low-ESR C7 doesn't hurt anything ...and even hepls) Some low-C clamping diodes at the junction of R7,R8,R9 might be needed if the voltage at this node gets too high at high input signal levels. If the comparator's kickback still backpropagates to the input in a real circuit then increase R7 (the one thing LTspice cannot simulate). Also, to keep the input impedance high, the J1 and J2 and surrounding resistors/caps, should be connected in the air using the "dead bug" style with short legs. Generally, the amplifier still needs design work. P.S. The BF245 transistors have a wide parameter spread due to high tolerances of the old manufacturing process. The C version - the highest spread. The A version - the lowest spread, but it is a lottery with all of them (just the odds differ). The gain of the JFET amplifier should be judged by the amplitude at the red probe (J1.drain) because J3 is just a source follower for the comparator kickback isolation.
|